Two samples of Zn
xMn
1−xFe
2O
4 (x = 0, sample A; and x = 0.4, sample B) were synthesized by the hydrothermal method. From complex impedance measurements in the range 100 Hz–2 MHz and for temperatures T between 30 and 130 °C, the barrier energy between localized states ΔE
relax was determined for the first time in these samples. For sample B, a single value of ΔE
relax was highlighted (0.221 eV), whilst, for sample A, two values were obtained (0.012 eV and 0.283 eV, below 85 °C and above 85 °C, respectively), associated with two zones of different conductivities. Using the Mott’s VRH model and the CBH model, we determined for the first time both the bandgap energy barrier (W
m) and the hopping (crossover) frequency (ω
h), at various temperatures. The results show that, for sample A,
Wm has a maximum equal to 0.72 eV at a temperature between 70 and 80 °C, whilst, for sample B, W
m has a minimum equal to 0.28 eV at a temperature of 60 °C, the results being in good agreement with the temperature dependence of the static conductivity σ
DC(T) of the samples. By evaluating σ
DC and eliminating the conduction losses, we identified, using a novel approach, a dielectric relaxation phenomenon in the samples, characterized by the activation energy
EA,rel. At various temperatures, we determined
EA,rel, which ranged from 0.195 eV to 0.77 eV. These results are important, as understanding these electrical properties is crucial to various applications, especially in technologies where temperature variation is significant.
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